Researchers from Holst Centre (Eindhoven, The Netherlands) have become the first to use spatial atomic layer deposition (sALD) to create both the semiconductor and dielectric layer in a thin-film transistor (TFT) backplane. Using a low-temperature, large-area process for the backplane, the team created a 200 ppi QVGA display demonstrator. The process allows TFTs to be produced on cheaper, transparent plastic foils, significantly reducing the cost of flexible electronics applications such as displays and image sensors. To showcase the technology, Holst Centre has produced a display demonstrator using a backplane of top-gated self-aligned TFTs on a PEN foil.